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june 2011 ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 fab2200 ? audio subsystem with ster eo class-g headphone amplifier fab2200 audio subsystem with stereo class-g headphone amplifier and 1.2w mono class-d speaker amplifier features ? single supply: 2.8v ? 5.25v ? pop and click suppression ? differential or single-ended audio inputs ? rejects tdma noise from gsm handsets ? filterless fully differential class-d speaker amplifier ? programmable edge-rate control and spread spectrum minimize emi ? 1.2w into 8 ? at 4.2v, thd+n < 10% ? 970mw into 8 ? at 4.2v, thd+n < 1% ? 90% efficiency ? automatic gain control limits distortion and protects speakers at all battery voltages ? noise gate improves audio quality ? headphone amplifier ? power-saving class-g operation ? audio taper i 2 c volume control ? capacitor-free outputs ? integrated regulated charge pump ? sgnd pin eliminates ground-loop noise ? noise gate improves audio quality ? dpst analog bypass switch ? i 2 c control ? low-power shutdown mode ? current limit and thermal protection ? 25-bump, 0.4mm pitch wlcsp package description the fab2200 combines a capacitor-free stereo headphone amplifier with a monolithic class-d speaker amplifier. an integrated charge pump generates multiple supply rails for a ground-centered class-g headphone output. the charge pump is regulated for high power supply rejection ratio (psrr). the filterless class-d amplifier can be connected directly to a speaker without external filters. the programmable automatic gain control (agc) limits maximum speaker out put levels to protect speakers without introducing distortion. it can also dynamically limit clipping as the battery voltage falls. the noise gate can automatical ly mute the speaker or headphone amplifiers to reduce noise when input signals are low. applications ? cellular handsets ? notebook computers ? tablet pcs ordering information part number operating temperature range package packing method FAB2200UCX -40 to +85c 25-bump, 0.4mm pitch, wafer-level chip-scale package (wlcsp) 3000 units on tape & reel
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 2 fab2200 ? audio subsystem with st ereo class-g headphone amplifier typical application circuit figure 1. typical application circuit
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 3 fab2200 ? audio subsystem with st ereo class-g headphone amplifier pin configuration figure 2. top-view (bump-side down) pin definitions wlcsp name description type c1 vbatt power supply for speaker amplifier power b2 pgnd charge pump ground power c2 pgnd power ground power c3 agnd analog ground power b1 vreg charge pump regulator ? do not connect to an external power supply power a3 cpv dd charge pump output ? positive power supply for headphone amplifier power a4 cpv ss charge pump output ? negative mirror of cpv dd power a1 cfp charge pump flying capacitor positive terminal power a2 cfn charge pump flying capacitor negative terminal power d5 in1 line level audio input input e5 in2 line level audio input input d4 in3 line level audio input input e4 in4 line level audio input input b5 hpl left headphone output output a5 hpr right headphone output output c5 sgnd sense ground ? connect to agnd close to shield terminal of headphone jack input e1 spkrp positive speaker output output d1 spkrn negative speaker output output d3 bypin1 analog bypass switch input input e3 bypin2 analog bypass switch input input d2 bypout1 analog bypass switch output output e2 bypout2 analog bypass switch output output c4 sdb shutdown control input b4 scl i 2 c clock input input b3 sda i 2 c data i/o bi-directional
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 4 fab2200 ? audio subsystem with st ereo class-g headphone amplifier absolute maximum ratings stresses exceeding the absolute maximum ratings may dam age the device. the device may not function or be operable above the recommended operating conditions and st ressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recomm ended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. all voltages are referenced to gnd. symbol parameter min. max. unit v batt voltage on vbatt pin -0.3 6.0 v v in voltage on in1, in2, in3, in4, hpl, hpr pins cpv ss -0.3 cpv dd +0.3 v v sgnd voltage on sgnd pin -0.3 0.3 v v s voltage on sda, scl, sdb pins -0.3 v batt +0.3 v v sp voltage on spkrp, spkrn pins -0.3 v batt +0.3 v v byp voltage on bypin1, bypin2, bypo ut1, bypout2 pins -0.3 v batt +0.3 v duration of spkrp, spkrn short circuit to gnd or vbatt continuous duration of short circuit between spkrp and spkrn continuous duration of hpl, hpr short circuit to gnd continuous reliability information symbol parameter min. typ. max. unit t j junction temperature +150 c t stg storage temperature range -65 +150 c t l peak reflow temperature +300 c ja thermal resistance, jedec standard, multilayer test boards, still air 60 c/w tsd thermal shutdown threshold +150 c t hys thermal shutdown hysteresis +35 c esd protection symbol parameter condition min. unit hbm human body model (hbm) jesd22-a114-b level 2, ec61340-3-1: 2002 level 2, esd-stm5.1-2001 level 2, mil-std-883e 3015.7 level 2 3 kv cdm charged device model (cdm) jesd22-c101-c level iii, iec61340-3-3 level c4, esd-stm5.3.1-1999 level c4 2 kv notes: 1. device-use-level esd tests are conducted at the connector pins. 2. external esd suppressor asip protects the amplifie r outputs. suppressor is between amplifier and connector; 15 ? serial resistance + 5nf capacitor and zener diodes (1 4v breakdown voltage) connected to the ground. in addition, there is a ferrite bead in series between the suppressor and the connector. 3. the air discharge test can be ignored if the contact discharge test range is increased to the same voltages as air discharge (contact discharge is more stabl e and repeatable test than air discharge).
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 5 fab2200 ? audio subsystem with st ereo class-g headphone amplifier recommended operating conditions the recommended operatin g conditions table de fines the conditions for act ual device operatio n. recommended operating conditions are specified to en sure optimal performance to the datash eet specifications. fairchild does not recommend exceeding them or designing to absolute maximum ratings. symbol parameter min. max. unit t a operating temperature range -40 +85 c v batt supply voltage range 2.80 5.25 v electrical characteristics unless otherwise noted: hpa uses stereo single-ended inputs, spa uses differential input, unused inputs ac are grounded, f in = 1khz, agc off, pgainxx = 0db, hpxvol = 0db , presentgain = 6db, erc = 1, ssmt = 000, shdnb = 1, sdb = 1.8v, sda and scl pull-up voltage = 1.8v, z spk = 8 ? +68h, r hp = 32 ? , speaker amplifier and headphone amplifier on. typical values are at v batt = 3.7v, t a = 25c. minimum and maximum values are at v batt = 2.8v to 5.25v, t a = -40c to 85c. symbol parameter conditions min. typ. max. unit i dd quiescent supply current (z spk = open) headphone amplifiers enabled, speaker amplifier disabled , diffin43=1 3.5 ma headphone amplifiers disabled, speaker amplifier enabled , diffin21=1 4.7 headphone and speaker amplifiers enabled 6.2 i sd shutdown current shdnb = 0, sdb = 1.8v 2.2 a shdnb = 1, sdb = gnd 2.2 t on turn-on time time from shutdown to full speaker and headphone operation, zcd and ramps disabled 1.25 ms r in input resistance pgainxx = 0db 21.0 k ? pgainxx = 12db 8.5 maximum input signal swing (v batt = 2.8v to 5.25v, single-ended input) pgainxx = 0db 2.300 v pk-pk pgainxx = 12db 0.575 analog bypass switch r on on resistance i bypoutx = 20ma, bypx = 0v and v batt , bypen = 1 t a = 25c 1 ? thd total harmonic distortion v dif = 2v pp , v cm = v batt /2, f = 1khz, bypen = 1, load = 8 ? series resistance is 10 per switch 0.05 0.25 % no series resistors 0.10 i off off isolation bypen = 0, 10khz 1v rms sine wave applied across bypout1 and bypout2, bypin1 and bypin2 to gnd = 50 ? 94 db continued on the following page?
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 6 fab2200 ? audio subsystem with st ereo class-g headphone amplifier electrical characteristics (continued) unless otherwise noted: hpa uses stereo single-ended inputs, spa uses differential input, unused inputs ac are grounded, f in = 1khz, agc off, pgainxx = 0db, hpxvol = 0db , presentgain = 6db, erc = 1, ssmt = 000, shdnb = 1, sdb = 1.8v, sda and scl pull-up voltage = 1.8v, z spk = 8 ? +68h, r hp = 32 ? , speaker amplifier and headphone amplifier on. typical values are at v batt = 3.7v, t a = 25c. minimum and maximum values are at v batt = 2.80v to 5.25v, t a = -40c to 85c. symbol parameter conditions min. typ. max. unit speaker amplifier v os output offset voltage presentgain = mute 0.5 mv presentgain = 6db 2.5 k cp click-and-pop level peak voltage, a-weighted, 32 samples per second, presentgain = mute, inputs ac grounded into shutdown -70 dbv out of shutdown -70 psrr power-supply rejection ratio inputs ac grounded v batt = 2.8v to 5.25v 74 db f = 217hz, 100mv pp ripple 77 f = 1khz, 100mv pp ripple 75 p out output power thd+n < 1%, erc disabled, ssmt = 100, v batt = 4.2v 970 mw thd+n < 10%, erc disabled, ssmt = 100, v batt = 4.2v 1200 thd+n < 10%, erc disabled, ssmt = 100, v batt = 3.7v 930 thd+n < 10%, erc enabled, ssmt = 000, v batt = 3.7v 945 thd+n < 1%, erc enabled, ssmt = 000 v batt = 4.2v 930 975 v batt = 3.7v 750 thd+n total harmonic distortion plus noise p out = 350mw 0.030 0.075 % snr signal-to-noise ratio a-weighted, p out = 720mw, headphone amplifiers off diffinxx = 0 (single-ended) 97 db diffinxx = 1 (differential) 90 97 a-weighted, p out = 720mw, headphone amplifiers on diffinxx = 0 (single-ended) 97 diffinxx = 1 (differential) 97 v n output noise a-weighted, headphone amps off, diffinxx = 0, inputs ac grounded 32 v rms output frequency spread spectrum, ssmt = 000 330 khz fixed frequency, ssmt = 100 330 i out output current limit 1.3 a efficiency p out = 720mw, f = 1khz 90 % mute attenuation 100 db continued on the following page?
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 7 fab2200 ? audio subsystem with st ereo class-g headphone amplifier electrical characteristics (continued) unless otherwise noted: hpa uses stereo single-ended inputs, spa uses differential input, unused inputs ac are grounded, f in = 1khz, agc off, pgainxx = 0db, hpxvol = 0db , presentgain = 6db, erc = 1, ssmt = 000, shdnb = 1, sdb = 1.8v, sda and scl pull-up voltage = 1.8v, z spk = 8 ? +68h, r hp = 32 ? , speaker amplifier and headphone amplifier on. typical values are at v batt = 3.7v, t a = 25c. minimum and maximum values are at v batt = 2.80v to 5.25v, t a = -40c to 85c. symbol parameter conditions min. typ. max. unit headphone amplifiers i vbatt supply current in1 and in2 on, in3 and in4 off, diffin43=1, speaker amplifier off p out = 2x50w into 32 ? 4.4 ma p out = 2x250w into 32 ? 5.8 p out = 2x500w into 32 ? 6.8 v os output offset voltage hpxv ol = mute 0.15 mv k cp click-and-pop level peak voltage, a-weighted, 32 samples per second, hpxvol = mute, inputs ac grounded into shutdown -70 dbv out of shutdown -70 psrr power-supply rejection ratio inputs ac grounded v batt = 2.8v to 5.25v 95 db f = 217hz, v ripple = 200mv pp 95 f = 1khz, v ripple = 200mv pp 95 p out output power thd+n < 1% r hp = 16 ? 39 mw r hp = 32 ? hpxv ol = 4db 27 31 thd+n < 10% r hp = 32 ? hpxv ol = 6db 41 thd+n total harmonic distortion plus noise r hp = 32 ? , p out = 20mw 0.010 0.075 % r hp = 16 ? , p out = 10mw 0.020 snr signal-to-noise ratio a-weighted, p out = 32mw, speaker amplifier off hpxvol = 4db diffinxx = 0 (single-ended) 95 100 db diffinxx = 1 (differential) 100 a-weighted, p out = 32mw, speaker amplifier on hpxvol = 4db diffinxx = 0 (single-ended) 100 diffinxx = 1 (differential) 103 output noise a-weighted, speaker amplifier off, diffinxx = 0 6.5 v rms c l capacitive drive 100 pf x talk crosstalk hpl to hpr, hpr to hpl, p o = 15mw -85 db f p charge-pump frequency 1.3 mhz a v headphone gain accuracy across all gain stages 0.4 db channel-to-channel gain tracking hpl to hpr, hpxvol = 0db 0.3 % channel-to-channel gain tracking hpl to hpr across entire pre-amplifier and volume range 1 % mute attenuation 100 db
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 8 fab2200 ? audio subsystem with st ereo class-g headphone amplifier i 2 c dc electrical characteristics unless otherwise noted, v batt = 2.80v to 5.25v and t a = -40c to 85c. symbol parameter conditions fast mode (400khz) min. max. unit v il low-level input voltage v batt 2.80v to 5.25v -0.3 0.6 v v ih high-level input voltage v batt 2.80v to 5.25v 1.3 v v ol low-level output voltage at 3ma sink current (open-drain or open-collector) 0 0.4 v i ih high-level input current ea ch i/o pin, input voltage = v batt -1 1 a i il low-level input current each i/o pin, input voltage = 0v -1 1 a i 2 c ac electrical characteristics unless otherwise noted, v batt = 2.80v to 5.25v and t a = -40c to 85c. symbol parameter fast mode min. max. unit f scl scl clock frequency 0 400 khz t hd;sta hold time (repeated) start condition 0.6 s t low low period of scl clock 1.3 s t high high period of scl clock 0.6 s t su;sta set-up time for repeated start condition 0.6 s t hd;dat data hold time 0 0.9 s t su;dat data set-up time (4) 100 ns t r rise time of sda and scl signals (5) 20+0.1c b 300 ns t f fall time of sda and scl signals (5) 20+0.1c b 300 ns t su;sto set-up time for stop condition 0.6 s t buf bus free time between stop and start conditions 1.3 s t sp pulse width of spikes that must be suppressed by the input filter 0 50 ns notes: 4. a fast-mode i 2 c-bus ? device can be used in a standard-mo de system, but the requirement t su;dat ? 250ns must then be met. this is automatically the case if the devic e does not stretch the low period of the scl signal. if such a device does stretch the low period of the scl sig nal, it must output the next data bit to the sda line t r_max + t su;dat = 1000 + 250 = 1250ns (according to the standard-mode i 2 c bus specification) before the scl line is released. 5. c b equals the total capacitance of one bus line in pf. if mixe d with high-speed mode devices, faster fall times are allowed according to the i 2 c specification. figure 3. definition of timing for full-speed mode devices on the i 2 c-bus ?
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 9 fab2200 ? audio subsystem with st ereo class-g headphone amplifier typical performance characteristics system 2.5 supply voltage (v) supply current (ma) 3.0 3.5 4.0 4.5 5.0 5.5 3.0 3.5 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 4.0 z spkr = 8ohm+68uh r hp = 32ohm spkr path gain = 12db hp path gain = 0db spa+hpa spa hpa figure 4. quiescent supply current vs. supply voltage figure 5. hardware and software shutdown current vs. supply voltage speaker amplifier thd+n (%) figure 6. thd+n vs. output powe r figure 7. thd+n vs. frequency figure 8. efficiency vs. output powe r figure 9. efficiency vs. output powe r
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 10 fab2200 ? audio subsystem with st ereo class-g headphone amplifier typical performance characteristics 10 frequency (hz) psrr (db) v batt = 3.7v z spkr = 8ohm+68h v ripple = 100mv pp inputs ac grounded -100 -80 -60 -40 -20 0 100 1k 10k 100k figure 10. output power vs. supply voltage figure 11. psrr vs. frequency figure 12. output vs. frequency headphone amplifier figure 13. thd+n vs. output powe r figure 14. thd+n vs. output powe r
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 11 fab2200 ? audio subsystem with st ereo class-g headphone amplifier typical performance characteristics thd+n (%) thd+n (%) figure 15. thd+n vs. frequency figure 16. thd+n vs. frequency psrr (db) figure 17. power dissipation vs. total output powe r figure 18. psrr vs. frequency figure 19. crosstalk vs. frequenc y figure 20. output vs. frequency
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 12 fab2200 ? audio subsystem with st ereo class-g headphone amplifier functional description shutdown mode when shdnb bit is set to 0 or the sdb pin is grounded, the fab2200 enters low-power shutdown mode. while shdnb=0 and sdb is high, i 2 c communication is available. i 2 c values are preserved. values are not reset on exiting shutdown mode. if the sdb pin is grounded, i 2 c communication is unavailable. i 2 c values are not preserved. values are reset to default values after sdb goes high. inputs during shutdown to achieve low supply current during shutdown, all inputs must be at dc levels (except the bypass pins). audio inputs must be ac grounded. v batt must be within recommended operating conditions. i 2 c pins must be grounded or pulled high with no toggling. if ac is presented to the inputs during shutdown, standby current may increase slightly, but there are no other negative effects. thermal shutdown if the junction temperature of the device exceeds the thermal shutdown threshold (s ee electrical characteristics table ), the device protects itself by shutting down. the device remains shut down until the junction temperature falls below the thermal shutdown hysteresis. the i 2 c port remains functional and the ovrtemp bit is set to o. this bit remains set until it is read. if the device is still in thermal shutdown when the bit is read, it remains set to 1. otherwise, the bit is cleared to 0. over-current shutdown if the output current limit of either amplifier is exceeded ( see the electrical characteristics table ), the amplifier in question shuts down for approximately one second. after one second, the amplifier is re-enabled. if the amplifier output current ex ceeds the limit again, the cycle repeats. during current-limit shutdown, the i 2 c port remains functional. if the cu rrent-limit shutdown was caused by the speaker amplifier, the ovrc ursp bit is set to 1. this bit remains set until it is read. if the speaker amplifier is still in current-limit shutdown when the bit is read, it remains set to 1. otherwise, the bit is cleared to 0. signal path the input channels have a pr e-amplifier stage that can be set from 0db to 21db of gain. the headphone amplifiers have separate volu me controls that range from -53db to 6db. the speaker amplifier has a volume control that ranges from -25db to 6db. in addition, the speaker amplifier has a fixed gain of 6db. a variety of combinations of these signals can be routed to the headphone amplifiers or the speaker amplifier ( see table 1 ). for example, to connect the left headphone amplifier channel to in3 and in1, set the selhpl3 and selhpl1 bi ts to 1. selhpl4 and selhpl2 should be set to 0. the diffin43 and diffin21 bi ts configure the inputs as differential pairs. when conf igured as differential, the even-numbered selection bit should be 1 and the odd- numbered selection bit should be 0. for example, if channels 4 and 3 are a differential pair that should be connected to the speaker amplifier, diffin43 and selspa4 should be set to 1. selspa3, selspa2, and selspa1 should be set to 0. amplifier channels that hav e no inputs selected should be muted (hpxvol = 00000 or startgain = 000000). if an amplifier channel has no input selection bits set to 1, the amplifier c hannel is turned off. when the speaker amplifier is turned off, the spkrp and spkrn outputs stop switching. unused audio input pins must be ac grounded. an integrated dual-pole single-throw (dpst) analog bypass switch can be used to route system audio signals. for example, baseband audio can be routed to the speaker by connecting the bypoutx pins to the spkrx pins. baseband audio outputs would then be connected to the bypinx pins through optional external resistors if the baseband device expects a higher impedance than the existing speaker. gain for the headphone amplifier signal path is defined by pgainxx + hpxvol. gain for the speaker amplifier signal path is defined by pgainxx + presentgain + 6db. internal signal amplitude should not exceed 2.3v pp . extra caution should be taken when mixing signals. for example, if in1 is mixed with in3, the maximum peak to peak amplitude of in1 plus the maximum peak to peak amplitude of in3 should not exceed 2.3v pp .
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 13 fab2200 ? audio subsystem with st ereo class-g headphone amplifier table 1. input channel selection diffin43 diffin21 selxxx4 selxxx3 selxxx2 selxxx1 xxx amplifier input x x 0 0 0 0 xxx amplifier channel off 0 0 0 0 0 1 in1 0 0 0 0 1 0 in2 0 0 0 0 1 1 in2 + in1 0 0 0 1 0 0 in3 0 0 0 1 0 1 in3 + in1 0 0 0 1 1 0 in3 + in2 0 0 0 1 1 1 in3 + in2 + in1 0 0 1 0 0 0 in4 0 0 1 0 0 1 in4 + in1 0 0 1 0 1 0 in4 + in2 0 0 1 0 1 1 in4 + in2 + in1 0 0 1 1 0 0 in4 + in3 0 0 1 1 0 1 in4 + in3 + in1 0 0 1 1 1 0 in4 + in3 + in2 0 0 1 1 1 1 in4 + in3 + in2 + in1 0 1 0 0 0 0 xxx amplifier channel off 0 1 0 0 0 1 not supported 0 1 0 0 1 0 in2 - in1 0 1 0 0 1 1 not supported 0 1 0 1 0 0 in3 0 1 0 1 0 1 not supported 0 1 0 1 1 0 in3 + (in2 - in1) 0 1 0 1 1 1 not supported 0 1 1 0 0 0 in4 0 1 1 0 0 1 not supported 0 1 1 0 1 0 in4 + (in2 - in1) 0 1 1 0 1 1 not supported 0 1 1 1 0 0 in4 + in3 0 1 1 1 0 1 not supported 0 1 1 1 1 0 in4 + in3 + (in2 - in1) 0 1 1 1 1 1 not supported 1 0 0 0 0 0 xxx amplifier channel off 1 0 0 0 0 1 in1 1 0 0 0 1 0 in2 1 0 0 0 1 1 in2 + in1 1 0 0 1 0 0 not supported 1 0 0 1 0 1 not supported 1 0 0 1 1 0 not supported 1 0 0 1 1 1 not supported 1 0 1 0 0 0 in4 - in3 1 0 1 0 0 1 (in4 - in3) + in1 1 0 1 0 1 0 (in4 - in3) + in2 1 0 1 0 1 1 (in4 - in3) + in2 + in1 1 0 1 1 0 0 not supported 1 0 1 1 0 1 not supported 1 0 1 1 1 0 not supported 1 0 1 1 1 1 not supported 1 1 0 0 0 0 xxx amplifier channel off 1 1 0 0 0 1 not supported 1 1 0 0 1 0 in2 - in1 1 1 0 0 1 1 not supported 1 1 0 1 0 0 not supported 1 1 0 1 0 1 not supported 1 1 0 1 1 0 not supported 1 1 0 1 1 1 not supported 1 1 1 0 0 0 in4 - in3 1 1 1 0 0 1 not supported 1 1 1 0 1 0 (in4 - in3) + (in2 - in1) 1 1 1 0 1 1 not supported 1 1 1 1 0 0 not supported 1 1 1 1 0 1 not supported 1 1 1 1 1 0 not supported 1 1 1 1 1 1 not supported
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 14 fab2200 ? audio subsystem with st ereo class-g headphone amplifier class-g headphone amplifier with capacitor free outputs the fab2200 includes a regulated charge pump that derives cpv dd and cpv ss (the headphone amplifier power supplies) from vbatt. when the headphone output amplitude is low, the cpv dd is 1.3v and cpv ss is -1.3v. when needed, cpv dd and cpv ss dynamically increase to 1.8v and -1.8v, respectively, to allow for higher output amplitudes. the combination of an efficient regulated charge pump and class-g operation allows low headphone amplifier power dissipation, resulting in longer battery run time. the negative cpv ss rail allows the headphone amplifier output to be centered at 0v and eliminates the need for output dc blocking capacitors. the fab2200 headphone outputs can be placed in high-impedance mode by setting the hizx bits to 1 ( see table 2 ). this can be useful if the system?s headphone jack is shared with other devices. for proper high- impedance operation, the device must not be in shutdown mode. voltages on hpl and hpr must not exceed 1.8v. table 2. headphone amplifier output impedance, hizx=1 output impedance ( ? ) frequency (khz) 11800 40 760 6000 470 13000 headphone volume control ramp and zero-crossing detection the hpramp, hprampspeed, and hpzcd bits control the headphone amplifie rs? volume controls when hpxv ol is changed. table 3. headphone volume change behavior hpramp hpzcd behavior when hpxvol changes 0 0 volume changes immediately. 0 1 for each channel, wait until a zero crossing occurs in the input before changing volume. if a zero crossing does not occur within hpram pspeed, volume is forced to the new setting. 1 0 volume is ramped to the new setting at a rate of hprampspeed per step. 1 1 volume is changed by one step when a zero cr ossing occurs. if a zero crossing does not occur within hprampspeed, a step is forced. only the first zero crossing within hprampspeed triggers a volume change ? volume does not change again until the next hprampspeed. table 4. headphone volume change timing hprampspeed[1:0] ramp and zcd time between steps (ms) 00 0.25 01 2.00 10 16.00 11 128.00
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 15 fab2200 ? audio subsystem with st ereo class-g headphone amplifier programmable headphone amplifier noise gate the headphone noise gate automatically mutes the headphone amplifier when its input amplitudes are low to reduce noise during inactivity. this function is not recommended for musi c playback, but is effective for speech. the amplitude is measured after input pre- amplifiers and before the headphone amplifier volume controls. the headphone noise gate threshold level is set by the hpngthresh register. the amplitudes of both channels must be less than the noise gate threshold for a time determined by the hpngtime register. when the noise gate mutes the amplifier, the hpngtrip bit is set to 1. if either channel?s input amplitude goes above the headphone noise gate threshold, both amplifiers are un- muted and the hpngtrip bit is set to 0. the amplifiers are returned to the former hpxvol values. if either channel is in high-impedance mode (hizx=1), all inputs to that headph one should be deselected (selhpxx=0) so the noise gate ignores the hiz channel. if the hpngzra bit is set to 0, the headphone noise gate attack (mute) function occurs immediately rather than waiting for zero-crossing detection or ramping. if the hpngzra bit is set to 1, the headphone noise gate attack function obeys headphone zero-crossing detection and ramp settings. if the hpngzrr bit is set to 0, the headphone noise gate release (un-mute) function occurs immediately rather than waiting for zero-crossing detection or ramping. if the hpngzrr bit is set to 1, the headphone noise gate release (un-mute) function obeys headphone zero crossing detection and ramp settings. table 5. headphone noise gate threshold voltage hpngthresh [2:0] noise gate threshold (mv pk ) 000 headphone noise gate disabled 001 2.8 010 5.7 011 11.3 100 22.6 101 45.3 110 90.5 111 181.0 table 7. headphone noise gate timing hpngtime [2:0] time (ms) 000 10 001 20 010 40 011 80 100 160 hpngtime [2:0] time (ms) 101 320 110 640 111 reserved certain combinations of hpramp, hpzcd, hpngzra, and hpngzrr are valid as shown in table 8. combinations not listed may produce unpredictable results (x = don?t care). table 8. valid headphone amplifier ramp / zero crossing / noise gate combinations hpramp hpzcd hpngzra hpngzrr 0 0 x x x x 1 1 1 x 1 0 class-d speaker amplifier the class-d amplifier achieves greater than 90% efficiency. programmable spread spectrum and edge rate control minimize electromagnetic interf erence (emi). rise and fall times are limited to 20ns per transition at all power levels. programmable automatic gain control (agc) the speaker amplifier?s agc c an be used to limit output amplitude and reduce clipping as supply voltage varies. the agc allows high-volume settings while minimizing distortion and protecting the speaker element. agc works by comparing the threshold voltage against a proposed output amplitude (the signal?s amplitude after all gain stages, before the pwm modulator). if the threshold is exceeded, gain is dynamically reduced until the output voltage level no longer exceeds the threshold or the minimum gain setting. when the output voltage level no longer exceeds the threshold, gain is slowly increased until either the output voltage level exceeds the threshold again or the starting gain is reached. agc settings should not be changed while the speaker amplifier is on. before ma king changes to thmax, thvbatt, agcattack, agcrelease, or agcmin; the speaker amplifier should be turned off by clearing all selspan bits to 0 or clearing shdnb to 0. agc threshold the agc threshold can be thought of as a target for the maximum output amplitude. it is defined by the thmax and thvbatt registers. thmax defines the maximum threshold value regardless of v batt supply voltage. this is useful for protecting speakers from high amplitudes. table 9 shows the thmax threshold settings as well as the corresponding maximum rms power (assuming a 1khz sine wave into an 8 ? load).
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 16 fab2200 ? audio subsystem with st ereo class-g headphone amplifier table 9. thmax threshold thmax [3:0] maximum output threshold (v pk ) maximum power with sine wave and 8 ? load (mw) thmax [3:0] maximum output threshold (v pk ) maximum power with sine wave and 8 ? load (mw) 0000 thmax threshold disabled 1000 3.6 810.0 0001 2.2 302.5 1001 3.8 902.5 0010 2.4 360.0 1010 4.0 1000.0 0011 2.6 422.5 1011 4.2 1102.5 0100 2.8 490.0 1100 4.4 1210.0 0101 3.0 562.5 1101 4.6 1322.5 0110 3.2 640.0 1110 4.8 1440.0 0111 3.4 722.5 1111 5.0 1562.5 thvbatt limits the amount of clipping allowed by the agc. as v batt falls, the maximum output amplitude falls. thvbatt defines the thresh old as a fraction of the v batt supply voltage. when the fraction is less than 1, the agc attempts to adjust ga in to prevent clipping. for values greater than 1, some clipping is allowed before the agc reduces gain ( see table 10 ). table 10. thvbatt threshold thvbatt [4:0] v batt fraction (v/v) thd with 1khz sine wave (%) (v batt =3.7v, 8 ? load) thvbatt [4:0] v batt fraction (v/v) thd with 1khz sine wave (%) (v batt =3.7v, 8 ? load) 0000 thvbatt threshold disabled 1000 1.25 13.0 0001 0.90 1.0 1001 1.30 14.4 0010 0.95 3.0 1010 1.35 15.6 0011 1.00 4.9 1011 1.40 16.7 0100 1.05 6.7 1100 1.45 17.7 0101 1.10 8.5 1101 1.50 18.7 0110 1.15 10.0 1110 1.55 19.6 0111 1.20 11.6 1111 1.60 20.5 ultimately, the agc threshol d is whichever voltage is lower between thvbatt and thmax. for example, if thmax = 0111, thvbatt = 0001, and v batt = 4.2v, the agc threshold is 3.4v as defined by thmax. if v batt falls to 3.6v, the agc threshold falls to 3.24v as defined by thvbatt ( see figure 21). if thvbatt and thmax are both set to 0, the agc is disabled. figure 21. agc threshold, thmax = 0111, thvbatt = 0001 2.5 3.5 4.5 2.533.544.555.5 v batt (v) agc threshold (v) thmax 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 agc threshold (v) thmax t h v b a t t agc threshold a g c t h r e s h o l d v batt =4.2v v batt =3.6v
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 17 fab2200 ? audio subsystem with st ereo class-g headphone amplifier starting gain starting gain is the amount of speaker gain applied when the agc is not active. it can also be thought of as maximum gain when the agc is active. starting gai n is controlled by the startgain register ( see table 11). table 11. speaker gain values gain register [5:0] gain (db) gain register [5:0] gain (db) 000000 mute 100000 -9.5 000001 -25.0 100001 -9.0 000010 -24.5 100010 -8.5 000011 -24.0 100011 -8.0 000100 -23.5 100100 -7.5 000101 -23.0 100101 -7.0 000110 -22.5 100110 -6.5 000111 -22.0 100111 -6.0 001000 -21.5 101000 -5.5 001001 -21.0 101001 -5.0 001010 -20.5 101010 -4.5 001011 -20.0 101011 -4.0 001100 -19.5 101100 -3.5 001101 -19.0 101101 -3.0 001110 -18.5 101110 -2.5 001111 -18.0 101111 -2.0 010000 -17.5 110000 -1.5 010001 -17.0 110001 -1.0 010010 -16.5 110010 -0.5 010011 -16.0 110011 0 010100 -15.5 110100 0.5 010101 -15.0 110101 1.0 010110 -14.5 110110 1.5 010111 -14.0 110111 2.0 011000 -13.5 111000 2.5 011001 -13.0 111001 3.0 011010 -12.5 111010 3.5 011011 -12.0 111011 4.0 011100 -11.5 111100 4.5 011101 -11.0 111101 5.0 011110 -10.5 111110 5.5 011111 -10.0 111111 6.0
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 18 fab2200 ? audio subsystem with st ereo class-g headphone amplifier agc attack agc attack occurs when the agc determines that, after applying present gain, the ou tput signal amplitude would be too high and gain should be stepped down by 1db. the agc checks an approximati on of the amplitude of the output signal that in cludes present gain, but excludes clipping that may occur in the final output stage. all of the following conditions must be true to trigger an agc attack: ? the amplitude is above the agc threshold, and ? present gain is above the minimum gain point, and ? attack speed is not exceeded. the minimum gain is determined by the agcmin register. the rate of gain r eduction is determined by the agcattack register. agc release when the output signal is below the agc threshold, gain is stepped up by 1db. the rate of gain increase is determined by the agcrelease registers. gain is increased until it reaches the starting gain or an agc attack is triggered again. table 12. agc attack speed agcattack [2:0] agc attack speed (s/step) a gcattack [2:0] agc attack speed (s/step) 000 12.5 100 200 001 25.0 101 400 010 50.0 110 800 011 100.0 111 1600 table 13. agc release speed agcrelease [2:0] agc release speed (ms/step) agcrelease [2:0] agc release speed (ms/step) 000 12.5 100 200 001 25.0 101 400 010 50.0 110 800 011 100.0 111 1600
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 19 fab2200 ? audio subsystem with st ereo class-g headphone amplifier figure 22. agc flow chart is the present gain setting below the starting gain? has enough time (decay speed) passedsincethelast gain change? is the output amplitude above the agc threshold? can gain be lowered byastepwhilestaying above minimum gain? has enough time (attack speed) passedsincethelast gain change? set starting gain i 2 cregisters and reset the timers. start increase gain by 1 step and reset the timers. yes yes yes yes yes reduce gain by 1 step and reset timers. no no no no no
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 20 fab2200 ? audio subsystem with st ereo class-g headphone amplifier programmable speaker amplifier noise gate the speaker noise gate automatically mutes the speaker amplifier when its input amplitude is low to reduce noise during inactivity. this function is not recommended for music playback, but is effective for speech. the amplitude is measured after input pre-amplifiers, but before the speaker amplifier?s volume control. the speaker noise gate?s threshold level is set by the spngthresh register. the amplitude must be less than the speaker noise gate threshold for a time determined by the spngtime register. when the speaker noise gate mutes the speaker amplifier, the spngtrip bit is set to 1. if the input amplitude goes above the speaker noise gate threshold, the speaker amplifier is un-muted and the spngtrip bit is set to 0. if the agc is not enabled, the speaker amplifier is returned to its former presentgain value. if t he agc is enabled, agcrelease speed determines the new presentgain value. table 14. speaker noise gate threshold voltage spngthresh [2:0] speaker noise gate threshold (mvpk) 000 speaker noise gate disabled 001 2.8 010 5.7 011 11.3 100 22.6 101 45.3 110 90.5 111 181.0 table 15. speaker noise gate timing spngtime [2:0] time (ms) 000 10 001 20 010 40 011 80 100 160 101 320 110 640 111 reserved
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 21 fab2200 ? audio subsystem with st ereo class-g headphone amplifier speaker amplifier gain ramp and zero-crossing detection (zcd) the spramp, sprampspeed, and spzcd bits control the speed at whic h presentgain is changed when startgain is changed. table 16. speaker gain change behavior spramp spzcd behavior when startgain is changed 0 0 startgain changes immediately. 0 1 wait until a zero crossing occurs in the input before changing startgain. if a zero crossing does not occur within sprampspeed, startgain is forced to the new setting. 1 0 startgain is ramped to the new setti ng at a rate of sprampspeed per step. 1 1 startgain is changed by one step when a zero crossing occurs. if a zero crossing does not occur within sprampspeed, a step is forc ed. only the first zero crossing within sprampspeed triggers a gain change ? gain does not change again until the next sprampspeed. table 17. speaker gain change timing sprampspeed[1:0] ramp and zcd time between steps (ms) 00 0.25 01 2.00 10 16.00 11 128.00 spramp, sprampspeed, and spzcd have no effect on agc and noise gate timing. agc and noise gate timing have no effect on speaker amplifier gain ramp and zero-crossing detection. in the event of a conflict between these systems, presentgain chooses the lowest gain setting. for example, spramp is enabled with a slow sprampspeed and a fast agcattack. the user changes startgain from 111111 to 000001. as the ramp function begins to ramp presentgain down slowly (as defined by sprampspeed), a loud sound surpasses the agc threshold. this forces presentgain to react quickly (as defined by agcattack). if the sound?s amplitude falls below the agc threshold before presentgain reaches 000001, the quick gain reduction halts and the slow gain reduction resumes. valid combinations of spramp, spzcd, spngzra, and spngzrr are shown in table 18. combinations not listed may produce u npredictable results. table 18. valid speaker amplifier ramp / zero crossing / noise gate combinations spramp spzcd spngzra spngzrr 0 0 x x x x 1 1 1 x 1 0 note: 6. x = don?t care. if the spngzra bit is set to 0, the speaker noise gate attack (mute) function occurs immediately rather than waiting for zero-crossing detection or ramping. if the spngzra bit is set to 1, the speaker noise gate attack function obeys speaker zero crossing detection and ramp settings. if the spngzrr bit is set to 0, the speaker noise gate release (un-mute) function occurs immediately rather than waiting for zero-crossing detection or ramping. if the spngzrr bit is set to 1, the speaker noise gate release (un-mute) function obeys speaker zero-crossing detection and ramp settings.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 22 fab2200 ? audio subsystem with st ereo class-g headphone amplifier i 2 c control writing to and reading from the fab2200 registers is accomplished via the i 2 c interface. the i 2 c protocol requires that one device on the bus initiates and controls all read and write operations. this device is called the ?master? device. the master device also generates the scl signal, which is the clock signal for all other devices on the bus, called ?slave? devices. the fab2200 is a slave device. bo th the master and slave devices can send and receive data on the bus. during i 2 c operations, one data bit is transmitted per clock cycle. all i 2 c operations follow a repeating nine- clock-cycle pattern that consis ts of eight bits (one byte) of transmitted data followed by an acknowledge (ack) or not acknowledge (nack) from the receiving device. note that there are no unused clock cycles during any operation ? therefore, ther e must be no breaks in the stream of data and acks/nacks during data transfers. for most operations, i 2 c protocol requires the sda line to remain stable (unmoving) whenever scl is high;- i.e., transitions on the sda line can only occur when scl is low. the exceptions to this rule are when the master device issues a star t or stop condition. a slave device cannot issue a start or stop condition. start condition: this condition occurs when the sda line transitions from high to low while scl is high. the master device uses this c ondition to indicate that a data transfer is about to begin. stop condition: this condition occurs when the sda line transitions from low to high while scl is high. the master device uses this condition to signal the end of a data transfer. acknowledge and not acknowledge: when data is transferred to the slave device, it sends an acknowledge (ack) after receiving every byte of data. the receiving (slave) device sends an ack by pulling sda low for one clock cycle. when the master device is reading data from the slave device, the master sends an ack after receiving every byte of data. following the last byte, a master device sends a ?not acknowledge? (nack) instead of an ack, followed by a stop condition. a nack is indicated by leaving sda high during the clock after the last byte. slave address each slave device on the bus has a unique address so the master can identify which device is sending or receiving data. the fab2200 slave address is 1001101x binary where ?x? is the read/write bit. master write operations are indicated when x=0. master read operations are indicated when x=1. writing to and reading from the fab2200 all read and write operations must begin with a start condition generated by the master device. after the start condition, the master device must immediately send a slave address (7 bits), followed by a read/write bit. if the slave address matches the address of the fab2200, the fab2200 sends an ack by pulling the sda line low for one clock cycle. setting the pointer for all operations, the pointer stored in the command register must be pointing to the register that is going to be written to or read from. to change the pointer value in the command register, the read/write bit following the address must be 0. this indica tes that the master writes new information into the command register. after the fab2200 sends an ack in response to receiving the address and read/write bit, the master device must transmit an appropriate 8-bit pointer value, as explained in the i 2 c registers section. the fab2200 sends an ack after receiving the new pointer data. the pointer set operation is illustrated in figure 25 and figure 26. any time a pointer set is performed, it must be immediately followed by a read or write operation. the command register retains the current pointer value between operations; therefore subsequent read operations do not require a pointer set cycle. write operations always require the pointer be reset. reading if the pointer is already pointing to the desired register, the master can read from t hat register by setting the read/write bit (following the slave address) to 1. after sending an ack, fab2200 begins transmitting data during the following clock cycle. the master should respond with a nack, followed by a stop condition (see figure 23). the master reads multiple bytes by responding to the data with an ack instead of a nack and continuing to send scl pulses, as shown in figure 24. the fab2200 increments the pointer by one and sends the data from the next register. the master indicates the last data byte by responding with a nack, followed by a stop. to read from a register other than the one currently indicated by the command register, a pointer to the desired register must be set. immediately following the pointer set, the master must perform a repeat start condition ( see figure 26 ), which indicates to the fab2200 that a new operation is about to occur. if the repeat start condition does not occur, the fab2200 assumes that a write is taking place and the selected register is overwritten by the upcoming data on the data bus. after the star t condition, the master must again send the device address and read/write bit. this time, the read/write bit must be set to 1 to indicate a read. the rest of the read cycle is the same as described in the previous paragraphs for reading from a preset pointer location.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 23 fab2200 ? audio subsystem with st ereo class-g headphone amplifier writing all writes must be preceded by a pointer set, even if the pointer is already pointing to the desired register. immediately following the po inter set, the master must begin transmitting the data to be written. after transmitting each byte of data, the master must release the serial data (sda) line for one clock cycle to allow the fab2200 to acknowledge receiving the byte. the write operation should be terminated by a stop condition from the master (see figure 25). as with reading, the master can write multiple bytes by continuing to send data. the fab2200 increments the pointer by 1 and accepts data for the next register. the master indicates the last data byte by issuing a stop. figure 23. i 2 c read figure 24. i 2 c multiple-byte read figure 25. i 2 c write figure 26. i 2 c write followed by read
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 24 fab2200 ? audio subsystem with st ereo class-g headphone amplifier register map the i 2 c slave address is 1001101x, where x=0 for write operations and x= 1 for read operations. address b7 b6 b5 b4 b3 b2 b1 b0 0x00 version hpngtrip spngtrip ovrtemp ovrcursp 0 0x01 hizl hizr 0 bypen 0 0 0 shdnb 0x02 diffin43 diffin 21 pgain43 pgain21 0x03 selspa4 selspa3 selspa2 selspa1 hprampspeed hpzcd hpramp 0x04 selhpl4 selhpl3 selhpl2 selhpl1 sel hpr4 selhpr3 selhpr2 selhpr1 0x05 0 0 hplvol 0 0x06 0 0 hprvol 0 0x07 hpngzr a hpngthresh hpngzrr hpngtime 0x08 erc 0 0 0 sprampspeed spzcd spramp 0x09 spngzra spngthresh spngzrr spngtime 0x0a thmax thvbatt 0x0b 0 agcattack 0 agcrelease 0x0c 0 0 agcmin 0x0d 0 0 presentgain 0x0e 0 0 startgain 0x0f 0 0 mcssmt ssmt bits labeled ?0? have no effect if written. when read, the value is always 0. bits and addresses not listed in the register map are for testing only. these bits should never be written. when read, they may return any value.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 25 fab2200 ? audio subsystem with st ereo class-g headphone amplifier register descriptions address b7 b6 b5 b4 b3 b2 b1 b0 0x00 version hpngtrip spngtrip ovrtemp ovrcursp 0 default 010 0 0 0 0 0 version (read only) indicates the silicon revision number. hpngtrip (read only) 1 = headphone amplifiers are being muted by the noise gate. 0 = normal operation. spngtrip (read only) 1 = speaker amplifier is being muted by the noise gate. 0 = normal operation. ovrtemp (read/clear) 1 = the junction temperature of the device has exceeded the thermal shutdown threshold. (this bit remains set until it is read.) 0 = normal operation. ovrcursp (read/clear) 1 = the output current limit of the speaker amplifier has been exceeded. (this bit remains set until it is read.) 0 = normal operation. address b7 b6 b5 b4 b3 b2 b1 b0 0x01 hizl hizr 0 bypen 0 0 0 shdnb default 0 0 0 0 0 0 0 0 hizx 1 = hpx is muted and output is in high-impedance mode (see table 2) . 0 = normal operation. bypen 1 = dpst analog bypass switch is closed. 0 = dpst analog bypass switch is open. shdnb 1 = normal operation. 0 = low-power shutdown mode.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 26 fab2200 ? audio subsystem with st ereo class-g headphone amplifier address b7 b6 b5 b4 b3 b2 b1 b0 0x02 diffin43 diffin 21 pgain43 pgain21 default 0 0 0 0 0 0 0 0 diffin43 1 = in4 and in3 are configured as a differential pair. 0 = in4 and in3 are independent. diffin21 1 = in2 and in1 are configured as a differential pair. 0 = in2 and in1 are independent. pgain43 pgain43 sets the pre-amplifier gain for in4 and in3. pgain21 pgain21 sets the pre-amplifier gain for in2 and in1. pgainxx [2:0] pre-amplifier gain (db) pgainxx [2:0] pre-amplifier gain (db) 000 0 100 12 001 3 101 15 010 6 110 18 011 9 111 21 address b7 b6 b5 b4 b3 b2 b1 b0 0x03 selspa4 selspa3 selspa2 selspa1 hprampspeed hpzcd hpramp default 0 0 0 0 0 0 0 0 0x04 selhpl4 selhpl3 selhpl2 selhpl1 selhpr4 selhpr3 selhpr2 selhpr1 default 0 0 0 0 0 0 0 0 selspax 1 = channel inx is added to the speaker amplifier?s input. 0 = channel inx is disconnected fr om the speaker amplifier?s input. if all four selspax bits are 0, the speaker amplifier is turned off and the spkrp and spkrn outputs stop switching. selhplx 1 = channel inx is added to the left headphone amplifier?s input. 0 = channel inx is disconnected from left headphone amplifier?s input. if all four selhplx bits are 0, t he left headphone amplifier is turned off. selhprx 1 = channel inx is added to the right headphone amplifier?s input. 0 = channel inx is disconnected from right headphone amplifier?s input. if all four selhprx bits are 0, the right headphone amplif ier is turned off. hprampspeed hprampspeed sets timing for the headphone amplifiers? ramp function according to table 4 . hpzcd 1 = headphone amplifier zero-crossing detection is enabled. 0 = headphone amplifier zero-crossing detection is disabled. hpramp 1 = headphone amplifier volume ramping is enabled. 0 = headphone amplifier volume ramping is disabled.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 27 fab2200 ? audio subsystem with st ereo class-g headphone amplifier address b7 b6 b5 b4 b3 b2 b1 b0 0x05 0 0 hplvol 0 default 0 0 0 0 0 0 0 0 0x06 0 0 hprvol 0 default 0 0 0 0 0 0 0 0 hpxvol hpxvol sets the gain of the headphon e amplifiers according to table 19. hpxvol does not include pgainxx. ga in for the entire headphone amplifier signal path is defined by pgainxx + hpxvol. table 19. headphone amplifier gain settings hpxvol [4:0] gain (db) hpxvol [4:0] gain (db) 00000 mute 10000 -9 00001 -53 10001 -8 00010 -49 10010 -7 00011 -45 10011 -6 00100 -41 10100 -5 00101 -37 10101 -4 00110 -33 10110 -3 00111 -29 10111 -2 01000 -25 11000 -1 01001 -23 11001 0 01010 -21 11010 1 01011 -19 11011 2 01100 -17 11100 3 01101 -15 11101 4 01110 -13 11110 5 01111 -11 11111 6 address b7 b6 b5 b4 b3 b2 b1 b0 0x07 hpngzra hpngthresh hpngzrr hpngtime default 0 0 0 0 0 0 0 0 hpngzra 1 = the headphone noise gate attack function obeys headphone zero-crossing detection and ramp settings. 0 = the headphone noise gate attack (mute) function occu rs immediately rather than waiting for zero-crossing detection or ramping. hpngthresh hpngthresh sets the threshold voltage for the headphone amplifiers? noise gate function according to table 1. hpngzrr 1 = the headphone noise gate release (un-mute) function obeys headphone zero-crossing detection and ramp settings. 0 = the headphone noise gate release (un-mute) function occu rs immediately rather than waiting for zero-crossing detection or ramping. hpngtime hpngtime sets the timing for the headphone amplifie rs? noise gate function according to table 6.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 28 fab2200 ? audio subsystem with st ereo class-g headphone amplifier address b7 b6 b5 b4 b3 b2 b1 b0 0x08 erc 0 0 0 sprampspeed spzcd spramp default 0 0 0 0 0 0 0 0 erc 1 = speaker amplifier edge-rate control is enabled. 0 = speaker amplifier edge-rate control is disabled. sprampspeed sprampspeed sets timing for the speaker amplifier?s ramp function according to table 17. spzcd 1 = speaker amplifier zero-crossing detection is enabled. 0 = speaker amplifier zero-crossing detection is disabled. spramp 1 = speaker amplifier gain ramping is enabled. 0 = speaker amplifier gain ramping is disabled. address b7 b6 b5 b4 b3 b2 b1 b0 0x09 spngzra spngthresh spngzrr spngtime default 0 0 0 0 0 0 0 0 spngzra 1 = the speaker noise gate attack function obeys speaker zero-crossing detection and ramp settings. 0 = the speaker noise gate attack (mute) function occurs imm ediately rather than waiting for zero-crossing detection or ramping. spngthresh spngthresh sets the threshold voltage for the speaker am plifier?s noise gate function according to table 14. spngzrr 1 = the speaker noise gate release (un-mute) function ob eys speaker zero-crossing detection and ramp settings. 0 = the speaker noise gate release (un-mute) function o ccurs immediately rather than waiting for zero-crossing detection or ramping. spngtime spngtime sets the timing for the speaker amplifie r?s noise gate function according to table 15. address b7 b6 b5 b4 b3 b2 b1 b0 0x0a thmax thvbatt default 0 0 0 0 0 0 0 0 thmax thmax sets the maximum threshold voltage for the speaker amplifier?s agc according to table 9. thvbatt thvbatt sets the clipping level relative to v batt for the speaker amplifier?s agc according to table 10.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 29 fab2200 ? audio subsystem with st ereo class-g headphone amplifier address b7 b6 b5 b4 b3 b2 b1 b0 0x0b 0 agcattack 0 agcrelease default 0 0 0 0 0 0 0 0 agcattack agcattack sets the attack speed for the speak er amplifier?s agc according to table 12. agcrelease agcrelease sets the release speed for the speaker amplifier?s agc according to table 13. address b7 b6 b5 b4 b3 b2 b1 b0 0x0c 0 0 agcmin default 0 0 0 0 0 0 0 0 agcmin agcmin sets the minimum gain for the spea ker amplifier?s agc according to table 11. address b7 b6 b5 b4 b3 b2 b1 b0 0x0d 0 0 presentgain presentgain (read only) presentgain is the actual gain setting for the speaker amplifie r according to table 11 . the target value for presentgain is set by startgain. however, presentga in may be changed automati cally by the agc or the noise gate. presentgain does not include pgainxx. gain for the entire speaker amplifier signal path is defined by pgainxx + presentgain. address b7 b6 b5 b4 b3 b2 b1 b0 0x0e 0 0 startgain default 0 0 0 0 0 0 0 0 startgain startgain is the volume setting for the speaker amplifier according to table 11. address b7 b6 b5 b4 b3 b2 b1 b0 0x0f 0 0 mcssmt ssmt default 0 0 1 0 0 0 0 0 ssmt sets the spread-spectrum modulat ion of the class-d amplifier. see table 20 for the amount of modulation . a setting of 000 results in a 5.3% modulation in the speaker amplif ier?s output frequency. a setting of 100 disables spread- spectrum modulation.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 30 fab2200 ? audio subsystem with st ereo class-g headphone amplifier table 20. class-d spread-spectrum modulation trim ssmt [2:0] class-d spread-spectrum modulation trim (%) 000 5.3 001 7.0 010 10.6 011 21.2 100 0.0 101 3.0 110 3.6 111 4.2 mcssmt [5:3] sets the spread-spectrum modul ation of the master clock. see table 21 for amount of modulation . modulating the master clock does not modulate the class-d output frequency because the triangle wave generator is pll controlled. table 21. master clock spread-spectrum modulation trim mcssmt [2:0] master clock spread-spectrum modulation trim ( %) 000 5.3 001 7.0 010 10.6 011 21.2 100 0.0 101 3.0 110 3.6 111 4.2
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 31 fab2200 ? audio subsystem with st ereo class-g headphone amplifier applications information layout considerations general layout and supply bypassing play a major role in analog performance and thermal characteristics. fairchild offers a demonstration board to guide layout and aid device evaluation (contact fairchild for details). following this layout configuration provides optimum performance for the device. for the best results, follow the steps and recommended routing rules listed below. recommended routing / layout rules ? do not run analog and digital signals in parallel. ? use separate analog and digital power planes to supply power. ? place the speaker amplifier output as close as possible to the speaker element to reduce emi. ? traces should be run on top of the ground plane at all times. ? no trace should run over ground / power splits. ? avoid routing at 90-degree angles. ? place bypass capacitors within 0.1 inches of the device power pin. ? minimize all trace lengths to reduce series inductance.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 32 fab2200 ? audio subsystem with st ereo class-g headphone amplifier physical dimensions figure 27. 25-bump, 0.4mm pitch, wafer-level chip-scale package (wlcsp) product d e x y FAB2200UCX 2.06mm 2.38mm 0.39mm 0.23mm package drawings are provided as a service to customers considering fairchild comp onents. drawings may change in any manner without notice. please note the revision and/or date on the drawin g and contact a fairchild semiconductor representative to ver ify or obtain the most recent version. package specifications do not expand fairchild?s wo rldwide terms and condi tions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductors online packaging area for the most rec ent packaging drawings and tape and reel specifications http://www.fairchildsemi.com/packaging/ . ball a1 index area 1 2 3 4 5 a b c d e seating plane 25x a1 0.005 cab f ?0.2600.02 0.40 1.60 0.40 1.60 (x) 0.018 (y) 0.018 e d 0.06 c 0.05 c e d f 0.3780.018 0.2080.021 notes: a. no jedec registration applies. b. dimensions are in millimeters. c. dimensions and tolerance per asmey14.5m, 1994. d. datum c is defined by the spherical crowns of the balls. e. package nominal height is 586 microns 39 microns (547-625 microns). f. for dimensions d, e, x, and y see product datasheet. g. drawing filname: mkt-uc025aarev2. 0.03 c 2x 0.03 c 2x c b a 0.625 0.547 0.40 1.60 0.40 1.60 (?0.200) cu pad (?0.300) solder mask recommended land pattern (nsmd pad type) top view bottom view side views
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fab2200 ? rev. 1.0.1 33 fab2200 ? audio subsystem with st ereo class-g headphone amplifier

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